It is specialized for construction of the network. High compact circuit and Aluminium-alloy, draw bench of surface. good index and fine outfit.
* Adopt SOT-115 encapsulation RF module on access, reliable non-liner. Choose low-noise micro-wave push-pull circuit, small distortion and high S/N ratio.
* Set up EQ and ATT on the right place, more convenient of debugging. Small power consumption, high reliable, good performance and price ratio.
* Power Voltage(50Hz):AC (165～250)V 珍询；AC(35～60)V
* Power consumption: 8W
* Dimension: 178mm(L) x 100mm (W) x55mm(H)
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Item |
Unit |
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Forward path |
|||
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Frequency Range |
MHz |
(45) 85~862 |
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Rated Gain |
dB |
30 |
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Min Fill Gain |
dB |
≥30 |
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Rated Input Level |
dBμV |
70±2 |
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Rated Output Level |
dBμV |
100 |
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Flatness in Band |
dB |
±1 |
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Noise Figure |
dB |
≤10 |
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Return Loss |
dB |
≥14 |
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C/CTB (84 PAL-D) |
dB |
≥58 |
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C/CSO (84PAL-D) |
dB |
≥56 |
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Signal to Alternative Noise Ratio |
dB |
≤2% |
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Gain Stability |
dB |
± 1.0 |
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Voltage Stroke |
KV |
5 |
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Return path |
|||
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Frequency Range |
MHz |
5~(30)65(or specified by user) |
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Rated Gain |
dB |
15 |
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Flatness In Band |
dB |
±1 |
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Noise Figure |
dB |
≤12 |
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Return Loss |
dB |
≥16 |
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MAX Output Level |
dBμV |
≥110 |
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Carrier to second order intermodulation ratio |
dB |
≥52 |
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Carrier to Alternative noise ratio |
2% |
＜2 |
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General |
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Power Voltage(50Hz) |
V |
A:AC (165～250)V 赵腰；B： AC(35～60)V |
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Power consumption |
VA |
8 |
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Impulse Resisting Voltage |
Kv |
＞5 |
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Dimension |
Mm |
178(L) x 100 (W) x55(H) |
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